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Thursday, July 23, 2020 | History

2 edition of Wear of single-crystal silicon carbide in contact with various metals in vacuum found in the catalog.

Wear of single-crystal silicon carbide in contact with various metals in vacuum

Kazuhisa Miyoshi

Wear of single-crystal silicon carbide in contact with various metals in vacuum

by Kazuhisa Miyoshi

  • 327 Want to read
  • 15 Currently reading

Published by National Aeronautics and Space Administration, Scientific and Technical Information Office, for sale by the National Technical Information Office in Washington, Springfield, Va .
Written in English

    Subjects:
  • Silicon carbide.,
  • Silicon crystals.,
  • Transition metals.,
  • Auger effect.

  • Edition Notes

    StatementKazuhisa Miyoshi and Donald H. Buckley.
    SeriesNASA technical paper ; 1198, NASA technical paper -- 1198.
    ContributionsBuckley, Donald H., United States. National Aeronautics and Space Administration. Scientific and Technical Information Office.
    The Physical Object
    Pagination22 p. :
    Number of Pages22
    ID Numbers
    Open LibraryOL15227205M

    Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. More recently, it has found application. Crystal transformation and atomic ordering on wear and sliding friction in two cobalt alloys iron base binary alloys in contact with a single crystal silicon carbide surface in vacuum.

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of °C or higher. D. H. Buckley and R. Johnson, Wear, 11, (). K. Miyoshi and D. H. Buckley, ‘Friction and wear with a single crystal abrasive grit of silicon carbide- Effect of shear strength of metal’, NASA Technical Paper ().Author: A. Devaraju.

    We use cookies to offer you a better experience, personalize content, tailor advertising, provide social media features, and better understand the use of our services. A new single crystal silicon carbide MEMS fabrication process is developed using proton-implantation smart-cut technique. Bubble Nucleation During Oxidation of SiC Song and F. W. Smith, “Effects of Low-Pressure Oxidation on the Sur- face Composition of Single Crystal Silicon Carbide,” J. Am.


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Wear of single-crystal silicon carbide in contact with various metals in vacuum by Kazuhisa Miyoshi Download PDF EPUB FB2

Wear of Single-Crystal Silicon Carbide in Contact With Various Metals in Vacuum Kazuhisa Miyoshi Kanaza wa University Kanazawa, Japan and Donald H. Buckley Lewis Research Center Cleveland, Ohio National Aeronautics and Space Administration Scientific and Technical Information Office Wear of single-crystal silicon carbide in contact with various metals in vacuum.

Washington: National Aeronautics and Space Administration, Scientific and Technical Information Office ; Springfield, Va.: For sale by the National Technical Information Office, (OCoLC) Material Type: Government publication, National government publication.

SUMMARY An investigation was conducted to examine the friction behavior of single-crystal silicon carbide in contact with various metals and the nature of metal transfer to silicon carbide.

contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Sliding friction experiments were conducted in vacuum with single crystal silicon carbide () surface in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum.

Wear of single-crystal silicon carbide in contact with various metals in vacuum / By Kazuhisa. Miyoshi, joint author. Transition metals., Silicon carbide.

Publisher: Washington: National Aeronautics and Space Administration, Scientific and Technical Information Office ; Springfield, Va.: For sale by the National Technical Information. The single-crystal silicon carbide used in the experiments was a percent pure compound of silicon and carbon and had a hexagonal close-packed crystal structure.

The polycrystalline titanium was percent pure and also had a hexagonal close-packed crystal structure. The contacting surfaces of the single-crystal silicon carbide and the. Coefficient of friction as a function of the percentage of metal d bond character for a single-crystal silicon carbide {OOOl} surface in sliding contact with various metals in vacuum (sliding direction, sliding velocity, 3 X 10 3 m min 1; load, - N; room temperature; vacuum pressure Cited by: 8.

Oct 02,  · Here, we show that when the size of the cutting tool is decreased to the nanometer dimensions, silicon carbide wears in a ductile manner by means of dislocation plasticity.

We present different categories of dislocation activity observed for single asperity sliding on SiC as a function of depth of cut and for different sliding brightsideglobaltrade.com by: Ultrahigh-quality Silicon Carbide Single Crystals Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Silicon carbide, Single crystal, Power device, Crystal growth, FWHM (in case B) plots for various measurement points z, which is the distance from seed crystal in.

Fracture pits of single-crystal silicon carbide in contact with at.%W-Fe alloy as a result of ten passes of the rider in vacuum (10~8 Pa) (scanning electron photomicro- graph of wear tracks on silicon carbide {OOOl} surface; sliding velocity, 3 mm min"1; load, N; room temperature).

cleavage cracking on the surface and in subsurface brightsideglobaltrade.com by: Silicon carbide is the hardest of the conventional abrasives but has lower impact resistance than aluminium oxide and shows a higher wear rate when used for grinding steels.

Silicon carbide wears more rapidly when used to grind metals that have an affinity for carbon such as iron and nickel. It is therefore used primarily for non-ferrous materials.

Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native oxide brightsideglobaltrade.com by: 7.

Sliding friction experiments were conducted with single-crystal manganese-zinc ferrite in contact with itself and with transition metals. The results indicate that mating highest atomic density directions 〈〉 on matched crystallographic planes exhibit the lowest coefficient of friction which suggests that direction is important in the friction behavior of brightsideglobaltrade.com by: Adhesion and Friction of Transition Metals in Contact with Nonmetallic Hard Materials Friction and Wear Behavior of Single-Crystal Silicon Carbide in Sliding Contact with Various Metals, ASLE, Trans D.

Buckley, Friction and Transfer Behavior of Pyrolytic Boron Nitride in Contact with Various Metals, ASLE, Trans., ( Cited by: Silicon carbide in contact with silicon carbide exhibits lower friction than unlubri- cated metals and retains it to much higher temperatures (refs.

1 and 2). Furthermore, the effect of crystallographic orientation and load on the Knoop microhardness of single- crystal silicon carbide has been investigated (ref. Pull-off force (adhesion) as a function of Young's Modulus of metals in contact with silicon nitride in vacuum S S.5 ce.

u- & t LU (E.3 ORh 50 SHEAR MODULUS. GPa Fig. Coefficients of friction as a function of shear modulus of metals m contact with silicon carbide m vacuum.

the cohesive bonds in the metal were broken [9].Cited by: Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh, and W) in contact with single-crystal silicon carbide riders. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.

Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic brightsideglobaltrade.comal formula: CSi.

Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to °C.

In air, SiC forms a protective silicon oxide coating at °C and is able to be used up to °C. An investigation was conducted to examine the surface chemistry and friction behavior of a single crystal silicon carbide () surface in sliding contact with iron at various temperatures to.

Single crystal silicon (Si), the same material used in silicon semiconductor wafers, has almost no impurities. CoorsTek uses this ultra-pure silicon to produce precision parts for silicon wafer handling in plate, rod, ring, and custom shapes.Effect of Crystal Orientation on Hardness of Silicon Carbide for single-crystal silicon carbide in contact with various metals in vacuum.

response of single crystal silicon carbide (SiC.shear the metal has, the higher is the coefficient of adhesive friction, the greater is the metal transfer to silicon carbide, and the rougher is the wear scar on the surface of the metal. Abrasive wear and friction are strongly related to the shear strength of the bulk metal (ref.

3).Cited by: 6.